ROHM Semiconductor 2SA2091S
Medium power transistor
FEATURES
1) High speed switching. (Tf : Typ. : 30ns at IC = −1A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −0.5A, IB = −50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5879S !External dimensions (Unit : mm) 3.0 SPT (SC-72) 4.0 2.0 (15Min.) 3Min. 0.45 2.5 0.5 0.45 (1) Emitter (2) Collector (3) Base 5.0 (1) (2) (3) Taping specifications !APPLICATIONS
Small signal low frequency amplifier High speed switching Abbreviated symbol : A2091S !Structure PNP Silicon epitaxial planar transistor !Packaging specifications Package Type Taping TP 5000 Code Basic ordering unit (pieces) 2SA2091S !Absolute maximum ratings (Ta=25°C) Parameter Symbol VCBO VCEO VEBO DC IC ICP PC Limits −60 −60 −6 −1.0 −2.0 300 150 −55 to 150 Unit V V V A A mW °C °C ∗ Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature ∗Pw=100ms Pulsed Tj Tstg 1/3 2SA2091S Tr...