ROHM Semiconductor 2SAR554R
Midium Power Transistors
FEATURES
1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA) 2) High speed switching● Structure PNP Silicon epitaxial planar transistor
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APPLICATIONS
Driver● Dimensions (Unit : mm) TSMT3 (3) (1) (2) Abbreviated symbol : MH
● Packaging specifications Type Package TSMT3 Code TL Basic ordering unit (pieces) 3000
● Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO IC ICP *1 PD *2 PD *3 Tj Tstg -80 -80 -6 -1.5 -3 0.5 1.0 150 -55 to 150 *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land. *3 Mounted on a 40 x 40 x 0.7[mm] ceramic substrate. Unit V V V A A W W C C
● Inner circuit (1) (1) Base (2) Emitter (3) Collector (2) (3) ((23)) ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.07 - Rev.A 2SAR554R
● Electrical characteristic (Ta = 25C) Parameter Symbol...