2SB1132 - PNP Transistor

ROHM

Key Features

w VCE(sat). VCE(sat) = 0.2V(Typ. ) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1664 / 2SD1858.
Structure Epitaxial planar type PNP silicon transistor.
Dimensions (Unit : mm) 2SB1132 4.5 +0.2.
0.1 1.6 +.
0.1 1.5 +0.2.
0.1 2SA1515S 4 +.
0.2 2 +.
0.2 3.
+ 0.2 0.5.
+ 0.1 3Min. +0.2.
0.1 4.0.
+ 0.3 (15Min. ) 2.5 1.0.
+ 0.2 (1) (2) (3) 0.4 +.
0.1 1.5 +.
0.1 0.5 +.
0.1 3.0.

2SB1132 pnp transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SB1132
Manufacturer	ROHM
File Size	169.34 KB
Description	PNP Transistor
Datasheet	2SB1132 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SB1132	PNP Transistor	HOTTECH
2SB1132	Plastic-Encapsulate Transistors	WILLAS
2SB1132	PNP Transistor	JCET
2SB1132	MEDIUM POWER TRANSISTOR	AiT Components
2SB1132	PNP General Purpose Amplifier	GME

Other Datasheets by ROHM

Part Number	Description
2SB1130AM	Epitaxial Planar PNP Silicon Transistor
2SB1181	Power Transistor
2SB1182	Medium power Transistor
2SB1183	Power transistor
2SB1184	Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 2SB1132 4.5 +0.2 −0.1 1.6 +− 0.1 1.5 +0.2 −0.1 2SA1515S 4 +− 0.2 2 +− 0.2 3 −+ 0.2 0.5 −+ 0.1 3Min. +0.2 −0.1 4.0 −+ 0.3 (15Min.) 2.5 1.0 −+ 0.2 (1) (2) (3) 0.4 +− 0.1 1.5 +− 0.1 0.5 +− 0.1 3.0 +− 0.2 0.4 0.1 1.5+− 0.1 0.4 +0.1 −0.05 5 0.45 +0.15 −0.05 2.5 +0.4 −0.1 (1) Base ROHM : MPT3 (2) Collector EIAJ : SC-62 (3) Emitter ∗Abbreviated symbol: BA (1) (2) (3) ROHM : SPT EIAJ : SC-72 2SB1237 6.8+− 0.2 2.5+− 0.2 0.5 0.45 +0.15 −0.05 (1) Emitter (2) Collector (3) Base 4.4 −+ 0.2 1.0 0.9 0.65Max.