2SB1316 Datasheet PDF

Transistors Power Transistor (−100V , −2A) 2SB1316 2SB1316 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage VCBO VCEO −100 −100 Emitter-base voltage Collector current Collector 2SB1580 power dissipation 2SB1316 VEBO IC PC −8 −2 −3 2 1 10 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 Single pulse Pw=100ms ∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board. Unit V V V A(DC) A(Pulse) ∗1 W ∗2 W(Tc=25°C) °C °C zPackaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) ∗ Denotes hFE 2SB1580 MPT3 1k to 10k BN∗ T100 1000 2SB1316 CPT3 1k to 10k − TL 2500 zEquivalent circuit C B R1 R2 E R1 3.5kΩ R2 300Ω B : Base C : Collector E : Emitter zE