2SB1710 - PNP Middle Power Transistor

ROHM

Key Features

1)A collector current is large. 2)Collector saturation voltage is low. 　 VCE(sat)≦-350mV 　 at IC=-500mA /IB= -25mA lOutline TSMT3 　　 SOT-346T SC-96 　　　　　　　　　　　 lInner circuit Datasheet 　　 l.

2SB1710 pnp middle power transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SB1710
Manufacturer	ROHM
File Size	1.48 MB
Description	PNP Middle Power Transistor
Datasheet	2SB1710 Datasheet

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Other Datasheets by ROHM

Part Number	Description
2SB1713	Bipolar transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB1710 General purpose amplification (-30V, -1A) Parameter VCEO IC Value -30V -1A lFeatures 1)A collector current is large. 2)Collector saturation voltage is low. 　 VCE(sat)≦-350mV 　 at IC=-500mA /IB= -25mA lOutline TSMT3 　　 SOT-346T SC-96 　　　　　　　　　　　 lInner circuit Datasheet 　　 lApplication LOW FREQUENCY AMPLIFIER lPackaging specifications 　　　　　　　　　　　　　　　　　　　　　　 Part No. Package Package size Taping code Reel size Tape width (mm) (mm) Basic ordering unit.(pcs) Marking 2SB1710 TSMT3 2928 TL 180 8 3000 EW 　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/6 20150730 - Rev.