2SB822 - Medium power Transistor

ROHM

Key Features

1) Low VCE(sat). VCE(sat) =.
0.5V (Typ. ) (IC / IB =.
2A /.
0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit: mm) (96-131-B24) 215 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FElectrical characteristics (Ta = 25_C) 216 Transistors FPackaging specifications and hFE 2SB1188 / 2SB1182 / 2SB1.

2SB822 medium power transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SB822
Manufacturer	ROHM
File Size	130.42 KB
Description	Medium power Transistor
Datasheet	2SB822 Datasheet

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Other Datasheets by ROHM

Part Number	Description
2SB851	PNP Silicon Transistor
2SB852K	High-gain Amplifier Transistor
2SB889F	(2SB889F / 2SB1189 / 2SB1238) Medium Power Transistor
2SB891	Epitaxial Planar PNP Silicon Transistor
2SB891F	Medium Power Transistor

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.