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2SC2062S - High-gain Amplifier Transistor

Key Features

  • 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min. ) at VCE = 3V, IC = 0.1A. ) 2) High input impedance. zAbsolute maximum ratings (Ta=25°C) C 5.0 (1) (2) (3) zExternal dimensions (Unit : mm) SPT 4.0 2.0 3.0 (15Min. ) 3Min. 0.45 2.5 0.5 0.45 (1)Emitter (2)Collector B Taping specifications (3)Base E : Emitter C : Collector B : Base E zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current C.

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Datasheet Details

Part number 2SC2062S
Manufacturer ROHM
File Size 87.27 KB
Description High-gain Amplifier Transistor
Datasheet download datasheet 2SC2062S Datasheet

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www.DataSheet4U.com 2SC2062S Transistors High-gain Amplifier Transistor (32V, 0.3A) 2SC2062S zFeatures 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE = 3V, IC = 0.1A.) 2) High input impedance. zAbsolute maximum ratings (Ta=25°C) C 5.0 (1) (2) (3) zExternal dimensions (Unit : mm) SPT 4.0 2.0 3.0 (15Min.) 3Min. 0.45 2.5 0.5 0.45 (1)Emitter (2)Collector B Taping specifications (3)Base E : Emitter C : Collector B : Base E zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC PC Tj Tstg Limits 40 32 12 0.3 0.