2SC2062S Datasheet PDF

2SC2062S Transistors High-gain Amplifier Transistor (32V, 0.3A) 2SC2062S zFeatures 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE = 3V, IC = 0.1A.) 2) High input impedance. zAbsolute maximum ratings (Ta=25°C) C 5.0 (1) (2) (3) zExternal dimensions (Unit : mm) SPT 4.0 2.0 3.0 (15Min.) 3Min. 0.45 2.5 0.5 0.45 (1)Emitter (2)Collector B Taping specifications (3)Base E : Emitter C : Collector B : Base E zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC PC Tj Tstg Limits 40 32 12 0.3 0.3 150 −55 to +150 Unit V V V A W °C °C zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Symbol BVCBO BVCES BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min.