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2SC3969 - Silicon NPN Transistor

Key Features

  • 1) Low VCE(sat). VCE(sat) = 0.15V (Typ. ) (IC / IB = 1A / 0.2A) 2) High breakdown voltage. VCEO = 400V 3) Fast switching. tr = 1.0µs (IC = 0.8A) FStructure Three-layer, diffused planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-698-C14) 236 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SC3969 / 2SC5161 FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows : 237 Transistors FElectrical characteristic curve.

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Datasheet Details

Part number 2SC3969
Manufacturer ROHM
File Size 120.69 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC3969 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors High Voltage Switching Transistor (400V, 2A) 2SC3969 / 2SC5161 FFeatures 1) Low VCE(sat). VCE(sat) = 0.15V (Typ.) (IC / IB = 1A / 0.2A) 2) High breakdown voltage. VCEO = 400V 3) Fast switching. tr = 1.0µs (IC = 0.