ROHM Semiconductor 2SC3969
Silicon NPN Transistor
Transistors High Voltage Switching Transistor (400V, 2A) 2SC3969 / 2SC5161 FFeatures 1) Low VCE(sat). VCE(sat) = 0.15V (Typ.) (IC / IB = 1A / 0.2A) 2) High breakdown voltage. VCEO = 400V 3) Fast switching. tr = 1.0µs (IC = 0.8A) FStructure Three-layer, diffused planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-698-C14) 236 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SC3969 / 2SC5161 FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows : 237 Transistors FElectrical characteristic curves 2SC3969 / 2SC5161 238 Transistors 2SC3969 / 2SC5161 FSwitching characteristics measurement circuit 239