ROHM Semiconductor 2SC5876U3
Medium power transistor
2SC5876U3 Medium power transistor (60V, 0.5A) Parameter VCEO IC Value 60V 500mA lFeatures 1)High speed switching. (Tf:Typ.:80ns at IC=500mA) 2)Low saturation voltage, typically (Typ.:150mV at IC=100mA, IB=10mA) 3)Strong discharge power for inductive load and capacitance load. 4)Complements the 2SA2088U3. lOutline SOT-323 SC-70 UMT3 lInner circuit Datasheet lApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifications Part No. Package 2SC5876U3 SOT-323 (UMT3) Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking 2021 T106 180 8 3000 VS © 2018 ROHM Co., Ltd. All rights reserved. 1/6 20180614 - Rev.001 2SC5876U3 lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Datasheet Symbol VCBO VCEO VEBO IC ICP*1 PD*2 Tj Tstg Values 60 60 6 500 1.0 200 150 -55 to +150 Unit V V V mA A mW ℃ ℃...