Datasheet4U Logo Datasheet4U.com

2SC5881 - Power transistor

Datasheet Summary

Features

  • 1) High speed switching. (Tf : Typ. : 25ns at IC = 5A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 3.0A, IB = 300mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2096 zExternal dimensions (Unit : mm) (SC-63) (1) 2.3 0.9 0.75 CPT3 (2) 5.5 1.5 5.1 0.9 (3) (1) Base (2) Collector (3) Emitter 0.65 2.3 C0.5 1.0 0.5 0.8Min. 1.5 2.5 9.5 0.5 2.3 Each lead has same dimensions Symbol : C5881 z.

📥 Download Datasheet

Datasheet preview – 2SC5881

Datasheet Details

Part number 2SC5881
Manufacturer ROHM
File Size 79.89 KB
Description Power transistor
Datasheet download datasheet 2SC5881 Datasheet
Additional preview pages of the 2SC5881 datasheet.

📁 Similar Datasheet

  • 2SC5882 - SILICON NPN EPITAXIAL TRANSISTOR (ETC)
  • 2SC5883 - SMALL-SIGNAL TRANSISTOR (ISAHAYA)
  • 2SC5884 - NPN Transistor (Panasonic Semiconductor)
  • 2SC5885 - NPN Transistor (Panasonic Semiconductor)
  • 2SC5885 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2SC5885 - Silicon NPN Power Transistor (Inchange Semiconductor Company Limited)
  • 2SC5886 - NPN Transistor (Toshiba Semiconductor)
  • 2SC5886A - NPN Transistor (INCHANGE)
  • 2SC5886A - Silicon NPN Transistor (Toshiba)
  • 2SC5887 - NPN Transistor (INCHANGE)
Other Datasheets by Rohm

Full PDF Text Transcription

Click to expand full text
2SC5881 Transistors Power transistor (60V, 5A) 2SC5881 zFeatures 1) High speed switching. (Tf : Typ. : 25ns at IC = 5A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 3.0A, IB = 300mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2096 zExternal dimensions (Unit : mm) (SC-63) (1) 2.3 0.9 0.75 CPT3 (2) 5.5 1.5 5.1 0.9 (3) (1) Base (2) Collector (3) Emitter 0.65 2.3 C0.5 1.0 0.5 0.8Min. 1.5 2.5 9.5 0.5 2.
Published: |