ROHM Semiconductor 2SCR514PFRA
Middle Power Transistor
2SCR514P FRA Middle Power Transistor (80V / 0.7A) Parameter VCEO IC Value 80V 0.7A lFeatures 1)Low saturation voltage, typically VCE(sat)=300mV (Max.) (IC/IB=300mA/15mA) 2)High speed switching lOutline SOT-89 SC-62 MPT3 lInner circuit Datasheet AEC-Q101 Qualified lApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifications Part No. Package 2SCR514P FRA SOT-89 (MPT3) Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking 4540 T100 180 12 1000 ND © 2016 ROHM Co., Ltd. All rights reserved. 1/6 20160920 - Rev.001 2SCR514P FRA Datasheet lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP*1 PD*2 PD*3 Tj Tstg Values 80 80 6 0.7 1.4 0.5 2.0 150 -55 to +150 Unit V V V A A W W ℃ ℃ lElectrical characteristics (Ta = 25°C) Parameter Collector-base breakdown volta...