ROHM Semiconductor 2SCR542D
Midium Power Transistors
FEATURES
1) Low saturation voltage VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA) 2) High speed switching●
APPLICATIONS
Driver● Dimensions (Unit : mm) CPT3 (SC-63) <SOT-428> (1) Base (2) Collector (3) Emitter
● Packaging specifications Type Package Code Basic ordering unit (pieces) CPT3 TL 2500
● Inner circuit (Unit : mm) (2)
●Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO IC ICP *1 PD *2 PD *3 Tj Tstg 30 30 6 5 10 1 10 150 -55 to 150 *1 Pw=10ms, Single Pulse *2 Mounted on a substrate *3 TC=25°C Unit V V V A A W W °C °C (1) Base (2) Collector (3) Emitter (1) (3) ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.12 - Rev.A 2SCR542D
●Electri