ROHM Semiconductor 2SCR554P5
Middle Power Transistor
2SCR554P5 Middle Power Transistors (80V / 1.5A) Parameter VCEO IC Value 80V 1.5A lFeatures 1)Low saturation voltage,typically VCE(sat)=300mV(Max.) (IC/IB=500mA/25mA) 2)High speed switching lOutline SOT-89 SC-62 MPT3 lInner circuit Datasheet lApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifications Part No. Package 2SCR554P5 SOT-89 (MPT3) Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking 4540 T100 180 12 1000 NH © 2016 ROHM Co., Ltd. All rights reserved. 1/6 20150730 - Rev.001 2SCR554P5 Datasheet lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP*1 PD*2 PD*3 Tj Tstg Values 80 80 6 1.5 3.0 0.5 2.0 150 -55 to +150 Unit V V V A A W W ℃ ℃ lElectrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdow...