ROHM Semiconductor 2SCR586D
Middle Power Transistors
| Part No. | 2SCR586D |
|---|---|
| Datasheet | 2SCR586D Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Middle Power Transistors |
| Buy | Stock & Price |
NotNeRewcDoemsimgennsded for 2SCR586D NPN 5.0A 80V Middle Power Transistor Parameter VCEO IC Value 80V 5A lFeatures 1) Suitable for Middle Power Driver. 2) Complementary PNP Types : 2SAR586D. 3) Low VCE(sat) VCE(sat)=300mV(Max.). (IC/IB=2A/100mA) lOutline TO-252 SC-63 CPT lInner circuit Datasheet lApplication LOW FREQUENCY AMPLIFIER lPackaging specifications Part No. Package 2SCR586D TO-252 (CPT) Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking 6595 TL 330 16 2500 CR586 © 2016 ROHM Co., Ltd. All rights reserved. 1/6 20161012 - Rev.002 2SCR586D lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Datasheet Symbol VCBO VCEO VEBO IC ICP*1 PD*2 Tj Tstg Values 80 80 6 5 10 10 150 -55 to +150 Unit V V V A A W ℃ ℃ NotNeRewcDoemsimgennsded for lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min.
