ROHM Semiconductor 2SCR587D3
Power Transistor
2SCR587D3 NPN 3A 120V Power Transistor Parameter VCEO IC Value 120V 3A lFeatures 1) Suitable for Power Driver. 2) Complementary PNP Types : 2SAR587D3 3) Low VCE(sat) VCE(sat)=120mV(Max.). (IC/IB=1A/100mA) lOutline DPAK TO-252 lInner circuit Datasheet lApplication LOW FREQUENCY AMPLIFIER lPackaging specifications Part No. Package 2SCR587D3 TO-252 (DPAK) Taping code TL1 TL Reel size Tape width Quantity (mm) (mm) (pcs) Marking 330 16 2500 2SCR587D3 © 2019 ROHM Co., Ltd. All rights reserved. 1/7 20190527 - Rev.002 2SCR587D3 lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Datasheet Symbol VCBO VCEO VEBO IC ICP*1 PD*2 Tj Tstg Values 120 120 6 3 6 10 150 -55 to +150 Unit V V V A A W ℃ ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Collector-base breakdown voltage BVCBO IC = 100μA Collector-emitter breakdown voltage B...