2SD1381F - Power Transistor

ROHM

Key Features

1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 !External dimensions (Units : mm) 2SD1898 0.5±0.1 0.2 4.5+.
0.1 1.6±0.1 0.2 1.5 +.
0.1 4.0±0.3 2.5+0.2.
0.1 (1) 1.0±0.2 (2) (3) 0.4±0.1 1.5±0.1 0.1 0.4+.
0.05 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 !Structure Epitaxial planer type NPN silicon transistor ROHM : MPT3 EIAJ : SC-62 Abbreviated symbol : DF (1) Base (2) Collector (3).

2SD1381F power transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SD1381F
Manufacturer	ROHM
File Size	89.47 KB
Description	Power Transistor
Datasheet	2SD1381F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F !Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 !External dimensions (Units : mm) 2SD1898 0.5±0.1 0.2 4.5+ −0.1 1.6±0.1 0.2 1.5 + −0.1 4.0±0.3 2.5+0.2 −0.1 (1) 1.0±0.2 (2) (3) 0.4±0.1 1.5±0.1 0.1 0.4+ −0.05 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 !Structure Epitaxial planer type NPN silicon transistor ROHM : MPT3 EIAJ : SC-62 Abbreviated symbol : DF (1) Base (2) Collector (3) Emitter 2SD1733 1.5±0.3 2SD1768S 4±0.2 2±0.2 3±0.2 0.3 5.5+ −0.1 9.5±0.5 (15Min.) 0.9 1.5 0.75 0.9 0.65±0.1 2.5 0.15 0.45+ −0.05 3Min. 6.5±0.2 0.2 5.1+ −0.1 C0.5 0.