ROHM Semiconductor 2SD1733
80V 1A Power Transistor
2SD1733 Power Transistor(80V,1A) Parameter VCEO Value 80V IC 1A lFeatures 1)High VCEO,VCEO=80V 2)High IC,IC=1A(DC) 3)Good hFE linearity 4)Low VCE(sat) 5)Complements the 2SB1181 lOutline CPT Datasheet TO-252 SC-63 lInner circuit lApplication Low frequency power amplifier lPackaging specifications Part No. Package Package size Taping code Reel size Tape width (mm) (mm) Basic ordering unit.(pcs) Marking 2SD1733 CPT 6595 TL 330 16 2500 D1733 © 2015 ROHM Co., Ltd. All rights reserved. 1/6 20150730 - Rev.001 2SD1733 lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Datasheet Symbol Values Unit VCBO 120 V VCEO 80 V VEBO 5 V IC 1 A PD*1 1 W PD*2 10 W Tj 150 ℃ Tstg -55 to +150 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = 50μA 120 - - V Collector-emi...