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2SD1757K - Power Transistor

Key Features

  • 1) Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA) 2) Optimal for muting. !External dimensions (Units : mm) (1) 0.4 (3) !Absolute maximum ratings (Ta = 25°C) 0.15 1.6 2.8 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 30 15 6.5 0.5 0.2 150.
  • 55~+150 Unit V V V A W °C °C 0.3to0.6 0to0.1 Each lead has same dimensions 0.8 1.

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Datasheet Details

Part number 2SD1757K
Manufacturer ROHM
File Size 57.41 KB
Description Power Transistor
Datasheet download datasheet 2SD1757K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD1757K Transistors Power Transistor (15V, 0.5A) 2SD1757K !Features 1) Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA) 2) Optimal for muting. !External dimensions (Units : mm) (1) 0.4 (3) !Absolute maximum ratings (Ta = 25°C) 0.15 1.6 2.8 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 30 15 6.5 0.5 0.2 150 −55~+150 Unit V V V A W °C °C 0.3to0.6 0to0.1 Each lead has same dimensions 0.8 1.1 0.95 0.95 1.9 2.