2SD1782K - Power Transistor

ROHM

Key Features

1)Low VCE(sat) 　 VCE(sat)=0.2V(Typ. ) 　 (IC/IB=0.5A/50mA) 2)High breakdown voltage. 　 BVCEO=80V 3)Complements the 2SB1198K lOutline SMT3 Datasheet 　　 2SD1782K SOT-346 　　　　　　　　　　　 lInner circuit 　　 l.

2SD1782K power transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SD1782K
Manufacturer	ROHM
File Size	1.17 MB
Description	Power Transistor
Datasheet	2SD1782K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD1782K Power Transistor (80V, 500mA) Parameter VCEO IC Value 80V 500mA lFeatures 1)Low VCE(sat) 　 VCE(sat)=0.2V(Typ.) 　 (IC/IB=0.5A/50mA) 2)High breakdown voltage. 　 BVCEO=80V 3)Complements the 2SB1198K lOutline SMT3 Datasheet 　　 2SD1782K SOT-346 　　　　　　　　　　　 lInner circuit 　　 lApplication DRIVER lPackaging specifications Part No. Package 2SD1782K SMT3 Package size 2928 　　　　　　　　　　　　　　　　　　　　　　 Taping code Reel size Tape width (mm) (mm) Basic ordering unit.(pcs) Marking T146 180 8 3000 AJ 　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/6 20141114 - Rev.