ROHM Semiconductor 2SD2167
Power Transistor
| Part No. | 2SD2167 |
|---|---|
| Datasheet | 2SD2167 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
Transistors Power Transistor (31±4V, 2A) 2SD2167 2SD2167 zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads. 4) PC=2 W (on 40×40×0.7mm ceramic board) zExternal dimensions (Unit : mm) 3.0 1.5 1.5 0.4 0.4 0.4 0.5 1.5 1.6 4.5 ROHM : MPT3 EIAJ : SC-62 4.0 1.0 2.5 0.5 (1) (2) (3) (1) Base (2) Collector (3) Emitter zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage VCBO VCEO 31±4 31±4 Emitter-base voltage Collector current VEBO IC 5 2 3 Collector power dissipation PC 0.5 2 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗ 1 Pw=20ms , duty=1 / 2 ∗ 2 When mounted on a 40 × 40 × 0.7 mm ceramic board. Unit V V V A(DC) A(Pulse) ∗ 1 W W ∗2 °C °C zPackaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) ∗ Denotes hFE 2
