2SD2170 Datasheet PDF

FEATURES

1) Built-in zener diode between collector and base. 2) Zener diode has low dispersion. 3) Strong protection against reverse power surges due to "L" loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode. !External dimensions (Units : mm) 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 0.5 (3) 4.5 1.6 (2) (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 1.5 0.4 ROHM : MPT3 EIAJ : SC-62 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC PC Tj Tstg Limits 90 90 6 2 3 2 150 −55~+150 +20 −10 +20 −10 Unit V V V A (DC) A (Pulse) W °C °C *1 *2 *1 *2 Single pulse Pw = 10ms , Duty = 1 / 2 When mounted on a 40 x 40 x 0.7 mm ceramic board. !Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 2SD2170 MPT3 1k~10k...