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2SD2318 - High-current gain Power Transistor

Key Features

  • 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A).
  • Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Single pulse PW=100ms Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 80 60 6 3 4.5 1 15 150.
  • 55 to +150 Unit V V V A A(Pulse) ∗ W W(TC=25°C) °C °C.
  • Packaging specifications and hFE.

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Datasheet Details

Part number 2SD2318
Manufacturer ROHM
File Size 94.02 KB
Description High-current gain Power Transistor
Datasheet download datasheet 2SD2318 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High-current gain Power Transistor (60V, 3A) 2SD2318 Features 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Single pulse PW=100ms Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 80 60 6 3 4.5 1 15 150 −55 to +150 Unit V V V A A(Pulse) ∗ W W(TC=25°C) °C °C Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SD2318 CPT3 UV TL 2500 Dimensions (Unit : mm) 2.3 0.9 0.75 5.5 1.5 0.5 2.3 5.1 6.5 (3) (2) (1) 0.9 2.3 0.65 1.0 0.5 0.8Min. 1.5 2.5 9.5 ROHM : CPT3 EIAJ : SC-63 C0.