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2SD2537 - Medium Power Transistor

Key Features

  • 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) !External dimensions (Units : mm) 2SD2537 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 0.5 (3) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 Single pulse Pw=100ms VCBO VCEO VEBO IC PC Tj Tstg 30 25 12 1.2 2 2 150.
  • 55~+150 V V V A (DC) A (Pulse) ∗1.

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Datasheet Details

Part number 2SD2537
Manufacturer ROHM
File Size 62.64 KB
Description Medium Power Transistor
Datasheet download datasheet 2SD2537 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD2537 Transistors Medium Power Transistor (25V, 1.2A) 2SD2537 !Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) !External dimensions (Units : mm) 2SD2537 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 0.5 (3) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 Single pulse Pw=100ms VCBO VCEO VEBO IC PC Tj Tstg 30 25 12 1.2 2 2 150 −55~+150 V V V A (DC) A (Pulse) ∗1 ∗2 W °C °C ROHM : MPT3 EIAJ : SC-62 0.4 Parameter Symbol Limits Unit 1.5 !Absolute maximum ratings (Ta = 25°C) 1.5 0.4 4.5 1.6 (2) (1) Base (2) Collector (3) Emitter ∗2 When mounted on a 40×40×0.7mm ceramic board.