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2SD2615 - Power Transistor

Key Features

  • 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1674. !Circuit diagram C B R1 R2 E R1 5.0kΩ B : Base R2 300Ω C : Collector E : Emitter !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature.
  • Single pulse, Pw=100ms Symbol VCBO VCEO VEBO IC PC T.

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Datasheet Details

Part number 2SD2615
Manufacturer ROHM
File Size 46.05 KB
Description Power Transistor
Datasheet download datasheet 2SD2615 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors Power Transistor (120V, 6A) 2SD2615 2SD2615 !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1674. !Circuit diagram C B R1 R2 E R1 5.