2SD2687S
Overview
- 5 5.0 (1) (2) (3)
- 45 (1)Emitter(GND) (2)Collector(OUT) (3)Base(IN) Taping specifications zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits VCBO 15 VCEO 12 VEBO 6 IC 5 Collector current ICP 8 PC 400 Power siddipation Tj 150 Junction temperature Tstg Range of storage temperature -55 to +150 ∗ Single pulse, Pw=10ms Unit V V V A A∗ mW °C °C zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗ Pulse Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 15 12 6 - - - 350 - - Typ. - - - - - 120 - 360 30 Max. - - - 100 100 250 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=10µA IC=1mA IE=10µA VCB=15V VEB=6V IC=1.5A, IB=30mA VCE=2V, IC=500mA ∗ VCE=2V, IE=-500mA, f=100MHz ∗ VCB=10V, IE=0A, f=1MHz 1/2 2SD2687S Transistors zPackaging specifications package Type Code Basic ordering unit (pieces) 2SD2687S Taping TP 5000 zElectrical characteristic curves 1000 Ta=100 C
