A2072
Overview
- 5 5.1 2.3 0.5 1.5 5.5
- 75 zApplications High speed switching, Low noise (2) Collector (3) Emitter
- 9 (1)
- 3 (2) (3)
- 8Min. 0.5 1.0 (1) Base
- 65 Abbreviated symbol : A2072 zStructure PNP silicon epitaxi al planar transistor zPackaging specifications Package Type Code Basic ordering unit (pieces) 2SA2072 Taping TL 2500 zAbsolut e maximum ratings (T a=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits -60 -60 -6 -3 -6 1.0 10.0 150 -55 to 150 Unit V V V A A W W °C °C ∗1 ∗2 ∗3 Power dissipation Junction temperature Range of storage temperature ∗1 Pw=100ms ∗2 Ta=25°C ∗3 Tc=25°C
- 5 1/4 2SA2072 Transistors zElectrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. -60 -60 -6 - - Typ. - - - - - Max. - - - -1.0 -1.0 Unit V V V µA µA Condition IC = -1mA IC = -100µA IE = -100µA VCB = -20V VEB = -4V IC = -2A IB = -0.2A VCE = -2V IC = -100mA VCE = -10V IE =100mA f =10MHz VCB = -10V IE =0mA f =1MHz IC = -3A IB1 = -300mA IB2 =300mA VCC -25V VCE (sat) hFE - 120 - -200 - -500 270 - mV - ∗1 ∗1 Transistor frequency fT 180 M
