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A821S - 2SA821S

Key Features

  • 1) High breakdown voltage, (VCER =.
  • 210V ) 2) Complements the 2SC1651S. zExternal dimensions (Unit : mm) SPT 4.0 3.0 2.0 (15Min. ) 3Min. 0.45 2.5 5.0 (1) (2) (3) 0.5 0.45 (1)Emitter (2)Collector (3)Base Taping specifications zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC PC Tj Tstg Limits.
  • 210.

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Datasheet Details

Part number A821S
Manufacturer ROHM
File Size 48.68 KB
Description 2SA821S
Datasheet download datasheet A821S Datasheet

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2SA821S Transistors High-voltage Amplifier Transistor (−210V, −30mA) 2SA821S zFeatures 1) High breakdown voltage, (VCER = −210V ) 2) Complements the 2SC1651S. zExternal dimensions (Unit : mm) SPT 4.0 3.0 2.0 (15Min.) 3Min. 0.45 2.5 5.0 (1) (2) (3) 0.5 0.