ROHM Semiconductor AG009DGQ3
Nch 40V 30A Power MOSFET
AG009DGQ3 3.3mm×3.3mm Package / Nch 40V 30A Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD 40V 8.0mΩ ±30A 75W lFeatures 1) Small high-powered package reduces mounting area by 36% at a maximum 2) Realization of high mounting reliability by original terminal and plating treatment 3) Assuring Tj=175℃ 4) AEC-Q101 Qualified lOutline HSMT8AG lInner circuit lApplication Switching lPackaging specifications Packing Embossed Tape Reel size (mm) 330 Type Tape width (mm) Basic ordering unit (pcs) 12 3000 Taping code TB Marking 009DG lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current VGS = 10V Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation Junction temperature Operating junction and storage temperature range VDSS ID*1 IDP*2 VGSS IAS*3 EAS*