ROHM Semiconductor AG040FGS4FRA
Nch 40V 120A Power MOSFET
AG040FGS4FRA Nch 40V 120A Power MOSFET VDSS RDS(on)(Max.) ID PD lFeatures AEC-Q101 qualified 100% Avalanche tested 40V 1.4mΩ ±120A 150W lOutline HPLF5060T5LSAH lInner circuit Datasheet lApplication Automotive Systems lPackaging specifications Packing Embossed Tape Reel size (mm) 330.0 Type Tape width (mm) Quantity (pcs) 12.0 3000 Taping code TCB Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) 040FGS4 Parameter Symbol Value Unit Drain - Source voltage VDSS Continuous drain current VGS = 10V ID*1 Pulsed drain current IDP*2 Gate - Source voltage VGSS Avalanche current, single pulse IAS*3 Avalanche energy, single pulse EAS*3 Power dissipation PD*1 Junction temperature Tj Operating junction and storage temperature range Tstg 40 V ±120 A ±480 A ±20 V 47 A 110 mJ 150 W 175 ℃ -55 to +175 ℃ © 2025 ROHM Co., Ltd. All rights reserved. 1/11 20250424 - Rev.002 AG040FGS4FRA lThermal resistance Parameter Thermal resistance, junction - case Datasheet Symbol RthJC*1 Values Unit Min.