B1241 - 2SB1241

ROHM

Key Features

1) High breakdown voltage and high current. BVCEO=.
80V, IC=.
1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. !Structure Epitaxial planar type PNP silicon transistor !External dimensions (Units : mm) 2SB1260 4.5+.
00..12 1.6±0.1 1.5.
+00..12 2SB1181 6.5±0.2 5.1+.
00..12 C0.5 2.3+.
00..12 0.5±0.1 0.5±0.1 4.0 ±0.3 2.5.
+00..12 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1.

B1241 2sb1241 by ROHM - Datasheet Preview

Datasheet Details

Part number	B1241
Manufacturer	ROHM
File Size	78.40 KB
Description	2SB1241
Datasheet	B1241 Datasheet

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Other Datasheets by ROHM

Part Number	Description
B1240	2SB1240
B1243	2SB1243
B1236	Power Transistor
B1236A	Power Transistor
B1237	2SB1237

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SB1260 / 2SB1181 / 2SB1241 Power Transistor (−80V, −1A) 2SB1260 / 2SB1181 / 2SB1241 5.5−+00..13 1.5±0.3 0.9 1.5 2.5 9.5±0.5 !Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. !Structure Epitaxial planar type PNP silicon transistor !External dimensions (Units : mm) 2SB1260 4.5+−00..12 1.6±0.1 1.5−+00..12 2SB1181 6.5±0.2 5.1+−00..12 C0.5 2.3+−00..12 0.5±0.1 0.5±0.1 4.0 ±0.3 2.5−+00..12 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 ROHM : MPT3 EIAJ : SC-62 Abbreviated ∗symbol: BH 0.4−+00..015 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.