ROHM Semiconductor BAS40-04HM
Schottky Barrier Diode
| Part No. | BAS40-04HM |
|---|---|
| Datasheet | BAS40-04HM Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
1) Small mold type (SOT-23) 2) High reliability 3) Low VF●Construction Silicon epitaxial planar type 4B ROHM : SSD3 JEDEC : SOT-23 JEITA : -
●Taping Dimensions (Unit : mm) 2.4 1.0MIN SOT-23 0.8MIN
●Structure (3) (1) Anode (2) Cathode (3) Cathode/ (1) (2) Anode T116
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ABSOLUTE MAXIMUM RATINGS
(Ta= 25°C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current IF Repetitive peak forward current IFRM Non-repetitive forward surge current IFSM Operating junction temperature Tj Storage temperature Tstg●
ELECTRICAL CHARACTERISTICS
(Tj= 25°C) Parameter Symbol VF1 Forward voltage VF2 VF3 Reverse current IR1 IR2 Conditions Duty≦0.5 Direct reverse voltage Direct current, per diode t ≦1s, Duty≦0.5, per diode Square wave, tp<10ms, n
