ROHM Semiconductor BAV170HMFH
Switching Diode
| Part No. | BAV170HMFH |
|---|---|
| Datasheet | BAV170HMFH Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Switching Diode |
| Buy | Stock & Price |
FEATURES
High reliability Small mold type Low IR●Inner Circuit
●Application General switching
●Structure Epitaxial planar
●
ABSOLUTE MAXIMUM RATINGS
(Ta = 25ºC) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Power dissipation PD Repetitive peak reverse forward current IFM Peak forward surge current IFSM Forward current IF Junction temperature Storage temperature ※Caution：static electricity Tj Tstg●Packaging Specifications Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Basic Ordering Unit(pcs) 3000 Taping Code T116 Marking D9Z Conditions - Limits 90 Unit V Ta≦25℃ 80 V 250 mW Per diode 500 mA Per diode, t=1μs 4000 mA Per diode Per device - 215 mA 125 mA 150 ℃ - -65 ～ 150 ℃ © 2017 ROHMCo., Ltd.All rights reserved. 1/5 2018/11/29_Rev.002 BAV170HMFH Data sheet
●Characteristics (Tj=25°C unless otherwise noted, Per diode) Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR Ct trr Conditions Min. Typ. Max.
