BM63363S-VC
Description
BM63363S-VA/-VC is an Intelligent Power Module posed of gate drivers, bootstrap diodes, IGBTs, fly wheel diodes. Low saturation voltage IGBTs optimized for low speed switching drive (to 6k Hz) such as a pressor is adopted. Please examine high speed switching series for high speed switching drive.
Key Specifications
- IGBT Collector-Emitter Voltage VCESAT: 1.5V(Typ)
- FWD Forward Voltage VF:
1.5V(Typ)
- FWD Reverse Recovery Time trr:
- Module Case Temperature TC:
100ns(Typ) -25 to +100°C
- Junction Temperature Tjmax:
150°C
Features
- 3phase DC/AC Inverter
- 600V/10A
- Low Side IGBT Open Emitter
- Built -in Bootstrap Diode
- High Side IGBT Gate Driver(HVIC):
SOI (Silicon On Insulator) Process,
Drive Circuit, High Voltage Level Shifting,
Current Limit for Bootstrap Diode,
Control Supply Under-Voltage Locked Out (UVLO)
- Low Side IGBT Gate Driver(LVIC):
Drive Circuit, Short Circuit Current Protection (SCP),
Control Supply Under Voltage Locked Out (UVLO),
Thermal...
