BR93LC46FJ-W Datasheet | ROHM

Memory ICs BR93LC46-W / BR93LC46F-W / BR93LC46RF-W / BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W 64×16bits serial EEPROM BR93LC46-W / BR93LC46F-W / BR93LC46RF-W / BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using five types of mands. The mands, addresses, and data are input through the DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or BUSY) can be output from the DO pin. z Applications VCRs, TVs, printers, car stereos, cordless telephones, short wave radios, programmable DIP switches, and other battery-powered equipment requiring low voltage and low current z Features 1) 64 words × 16 bits EEPROM 2) Operating voltage range When reading : 2.0 to 5.5V When writing : 2.7 to 5.5V 3) Low current consumption Operating (at 5V) : 3m A (Max.) Standby (at 5V) : 5µA (Max.) 4) Address can be incremented automatically during read operations. 5) Auto erase and auto plete functions can be used during write operations. 6) A write instruction inhibit function allows : - write protection when power supply voltage is low. - write disable state at power up. - writing using mand codes. 7) pact packages 8) Display of READY / BUSY status 9) TTL-patible input / output 10) Rewriting possible up to 100,000 times 11) Data can be stored for ten years without corruption. z Block diagram Power supply CS mand decode Control Clock generation SK Write disable High voltage generator voltage detector Address mand DI register buffer 6bits Address decoder 6bits 1,024bits Data 16bits register DO Dummy bits R/W amplifier 16bits EEPROM array Memory ICs z Pin descriptions CS SK DI DO 1 2 3 4 BR93LC46-W / BR93LC46F-W / BR93LC46RF-W...