ROHM Semiconductor BS2101F
The BS2101F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V.| Part No. | BS2101F |
|---|---|
| Datasheet | BS2101F Download |
| Manufacturer |  ROHM Semiconductor |
| Description | 600V High voltage High & Low-side / Gate Driver |
| Buy | Stock & Price |
GENERAL DESCRIPTION
The logic inputs can be used 3.3V and 5.0V. The Under Voltage Lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage. Key Specifications● High-side floating supply voltage: 600V
● Output voltage range:
● Min Output Current Io+/Io-: 10V to 18V 60mA/130mA
● Turn-on/off time: 220ns(Typ)
● Delay Matching: 50ns(Max)
● Offset supply leakage current:
● Operating temperature range: 50µA (Max) -40°C to +125°C Package SOP-8 W(Typ) x D(Typ) x H(Max) 5.00mm x 6.20mm x 1.71mm
FEATURES
● Floating Channels for Bootstrap Operation to +600V● Gate drive supply range f
