ROHM Semiconductor BS2114F
The BS2114F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V.| Part No. | BS2114F |
|---|---|
| Datasheet | BS2114F Download |
| Manufacturer |  ROHM Semiconductor |
| Description | 600V High voltage High & Low-side Gate Driver |
| Buy | Stock & Price |
GENERAL DESCRIPTION
The logic inputs can be used 3.3V and 5.0V. The Under Voltage Lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.FEATURES
● Floating Channels for Bootstrap Operation to +600V● Gate drive supply range from 10V to 20V
● Built-in Under Voltage Lockout for Both Channels
● 3.3V and 5.0V Input Logic Compatible
● Output in phase with input
APPLICATIONS
● MOSFET and IGBT high side driver applications Key Specifications● High-side floating supply voltage: 600V
● Output voltage range: 10V to 20V
● Min Output Current Io+/Io-: 500mA/500mA
● Turn-on/off time: 250n
