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BS2130F-G Datasheet PDF

ROHM Semiconductor BS2130F-G

The BS2130F is a monolithic bridge driver IC, which can drive N-channel power MOSFET and IGBT driver in 3 phase systems with bootstrap operations. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V.
Part No. BS2130F-G
Datasheet BS2130F-G Download
Manufacturer
ROHM Semiconductor
Description 600V High Voltage 3 Phase Bridge Driver
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BS2130F-G datasheet page 1 preview

GENERAL DESCRIPTION

The logic inputs can be used 3.3V and 5.0V. To provide a protection circuit, the device Includes an Under Voltage Lockout (UVLO) circuit and an Over Current Protection (OCP) circuit. The UVLO circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage. Key Specifications
● High-side floating supply voltage: 600V
● Output voltage range: 11.5 ~ 20V
● Min Output Current Io+/Io-: 200mA/350mA(Typ)
● OCP detect voltage 0.46V(Typ)
● OCP blanking time 150ns(Typ)
● Turn On/Turn Off: 630/580ns(Typ)
● Offset supply leakage current: 50µA (Max)
● Operating temperature range: -40°C ~+12
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