1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316.
inner circuit
C
B
R1 R2
E
R1 3.5kΩ R2 300Ω
B : Base C : Collector E : Emitter.
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
100
Collector-emitter voltage
VCEO
100
Emitter-base voltage
VEBO
6
Collector current Collector power dissipation
IC PC
2 3 ∗1 1
10
Junction temperatur.
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D1980 - Silicon NPN Power Transistor(Inchange Semiconductor)