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D1980 - 2SD1980

Key Features

  • 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316.
  • inner circuit C B R1 R2 E R1 3.5kΩ R2 300Ω B : Base C : Collector E : Emitter.
  • Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 100 Collector-emitter voltage VCEO 100 Emitter-base voltage VEBO 6 Collector current Collector power dissipation IC PC 2 3 ∗1 1 10 Junction temperatur.

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Datasheet Details

Part number D1980
Manufacturer ROHM
File Size 124.29 KB
Description 2SD1980
Datasheet download datasheet D1980 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistor (100V, 2A) 2SD1980 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. inner circuit C B R1 R2 E R1 3.