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D2318 - 2SD2318

Key Features

  • 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) 3) Complements the 2SB1639. !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature.
  • Single pulse Pw=100ms Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 80 60 6 3 4.5 1 15 150 -55~+150 !External dimensions (Units : mm) 2.3 0.9 0.75 Unit V V V A.

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Datasheet Details

Part number D2318
Manufacturer ROHM
File Size 50.46 KB
Description 2SD2318
Datasheet download datasheet D2318 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors High-current gain Power Transistor (60V, 3A) 2SD2318 2SD2318 !Features 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) 3) Complements the 2SB1639. !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature * Single pulse Pw=100ms Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 80 60 6 3 4.5 1 15 150 -55~+150 !External dimensions (Units : mm) 2.3 0.9 0.75 Unit V V V A *A(Pulse) W W(Tc=25˚C) ˚C ˚C 5.5 1.5 0.5 2.3 5.1 6.5 (3) (2) (1) 0.9 2.3 0.65 ROHM : CPT3 EIAJ : SC-63 1.0 0.5 0.8Min. 1.5 2.5 9.5 C0.