ROHM Semiconductor DA221
Switching diode
FEATURES
High reliability Small mold type●Inner Circuit Data sheet
●Application General switching
●Structure Epitaxial planar
●
ABSOLUTE MAXIMUM RATINGS
(Ta = 25ºC) Parameter Symbol Reverse voltage VR Repetitive peak reverse voltage VRM Average rectified forward current Io Forward current IFM Peak forward surge current IFSM Power dissipation * PD Junction temperature Tj Storage temperature Tstg *2 elements total●Characteristics (Ta = 25ºC) Parameter Symbol Forward voltage VF Reverse current IR Capacitance between terminals * Ct Reverse recoverytime trr ※Caution:static electricity *Capacitance:b/w 1pin and 2pin
●Packaging Specifications Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Basic Ordering Unit(pcs) 3000 Taping Code TL Marking K Conditions - t=1μs - Conditions IF=10mA VR=15V VR=6.0V f=1.0MHz - Limits 20 20 100 200 300 150 150 -55 ~ 150 Unit V V mA mA mA mW ℃ ℃ Min. - Value per element Typ. Max. Unit - 1.0 V - 0.1 μA - 4.0 pF - - ns © 2016 ROHMCo., Ltd.All rights reserved.