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DAP236U
Diodes
Band switching diode
DAP236U
!Applications High speed switching !External dimensions (Units : mm)
DAP236U
2.0±0.2 1.3±0.1 0.65 0.65 0.3 0.9±0.1 0.6
0.3±0.1
0.15±0.05
(All leads have the same dimensions)
!Construction Silicon epitaxial planar
ROHM : UMD3 EIAJ : SC-70 JEDEC : SOT-323
!Circuit
!Absolute maximum ratings (Ta=25°C)
Parameter
DC reverse voltage Power dissipation Junction temperature Storage temperature
Symbol VR P Tj Tstg
Limits 35 150 125 −55∼+125
Unit V mW ˚C ˚C
!Electrical characteristics (Ta=25°C)
Parameter
Forward voltage Reverse current Capacitance between terminals Forward operating resistance
Symbol VF IR CT rF
Min. − − − −
Typ. − − − −
Max. 1.0 10 1.2 0.90
Unit V nA pF Ω IF=10mA VR=25V
Conditions
VR=6V, f=1MHz IF=2mA, f=100MHz
0.1Min.