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DTA024EEB - 100mA/-50V Digital transistors

Download the DTA024EEB datasheet PDF. This datasheet also covers the DTA024EM variant, as both devices belong to the same 100ma/-50v digital transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (See equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy.
  • Dimensions (Unit : mm) VMT3 Abbreviated symbol : 38 EMT3F.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DTA024EM_Rohm.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DTA024EEB
Manufacturer ROHM
File Size 380.89 KB
Description 100mA/-50V Digital transistors
Datasheet download datasheet DTA024EEB Datasheet

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Other Datasheets by ROHM

Part Number Description
DTA024EM 100mA/-50V Digital transistors
DTA024EUB 100mA/-50V Digital transistors
DTA024XEB PNP -100mA -50V Digital Transistors
DTA024XM PNP -100mA -50V Digital Transistors
DTA024XUB PNP -100mA -50V Digital Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
-100mA/-50V Digital transistors(with built-in resistors) DTA024EM / DTA024EEB / DTA024EUB Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (See equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. Dimensions (Unit : mm) VMT3 Abbreviated symbol : 38 EMT3F (3) (1) (2) Structure PNP epitaxial planar silicon transistor (Resistor built-in type) Applications Inverter, Interface, Driver Abbreviated symbol : 38 UMT3F 0.32 2.0 0.9 0.53 0.425 (3) 1.