DTD713ZE Datasheet | ROHM

DTD713ZE / DTD713ZM Transistors 200m A / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD713ZE / DTD713ZM z Applications Inverter, Interface, Driver z External dimensions (Unit : mm) 1.6 0.3 (3) 0.8 1.6 0.7 0.55 (1)(2) 0.8 1.2 z Feature 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3) The bias resistors consist of thin-film resistors with plete isolation to allow negative biasing of the input. They also have the advantage of almost pletely eliminating parasitic effects. 4) Only the on / off conditions need to be set for operation, making the device design easy. 0.2 0.5 0.5 1.0 EMT3 JEITA No. (SC-75A) JEDEC No. <SOT-416> 0.1Min. (2) (1) (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : P21 DTD713ZM 1.2 0.32 (3) 0.4 0.4 0.13 0.5 z Structure NPN epitaxial plannar silicon transistor (Resistor built-in type) (1) IN (2) GND (3) OUT VMT3 Each lead has same dimensions Abbreviated symbol : P21 z Absolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Collector current Power dissipation Junction temperature Storage temperature ∗1 ∗2 z Packaging specifications Limits Package Unit V V m A m W...