EM6K33 Datasheet PDF

EM6K33 Nch+Nch 50V 200mA Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 50V 2.2Ω ±200mA 150mW lFeatures 1) High-speed switching. 2) Small package(EMT6) 3) Ultra low voltage drive(1.2V drive). lOutline SOT-563 SC-107C EMT6 lInner circuit Datasheet lPackaging specifications Packing lApplication Reel size (mm) Switching Type Tape width (mm) Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2> Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation total element VDSS ID IDP*1 VGSS PD*2 50 ±200 ±800 ±8 150 120 Junction temperature Operating junction and storage temperature range Tj 150 Tstg -55 to +150 Embossed Tape 180 8 8000 T2R K33 Unit V mA mA V mW ℃ ℃ © 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160825 - Rev.001 EM6K33 lThermal resistance Parameter Thermal resistance, junction - ambient total element Datasheet Symbol RthJA*2 Values Unit Min.