ROHM Semiconductor EMF18
Power management (dual transistors)
FEATURES
1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. ROHM : EMT6 1.2 1.6 (1) 0.13 Each lead has same dimensions Abbreviated symbol : F18 !Structure Silicon epitaxial planar transistor UMF18N (4) 0.65 1.3 0.65 0.7 0.9 (3) 0.5 0.5 0.5 1.0 1.6 0.2 1.25 (3) (2) (1) 2.1 0.15 DTr2 R2 (4) R1 Tr1 0.1Min. 0to0.1 ROHM : UMT6 EIAJ : SC-88 (5) R1=47kΩ R2=47kΩ (6) Abbreviated symbol :F18 !Packaging specifications Type EMF18 UMF18N EMT6 UMT6 Package F18 F18 Marking T2R TR Code 3000 Basic ordering unit (pieces) 8000 (1) !Equivalent circuits (6) Each lead has same dimensions 2.0 (5) (2) 1/4 EMF18 / UMF18N Transistors !Absolute maximum ratings (Ta=25°C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −60 −50 −6 −150 150 (TOTAL) 150 −55~+150 Unit V V V mA mW °C °C ∗ ∗ 120mW per element must not be exceeded.