ROHM Semiconductor EMF6
Power management
FEATURES
1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 0.22 (4) (5) (6) (3) (2) (1) 1.2 1.6 0.5 !Structure Silicon epitaxial planar transistor ROHM : EMT6 Each lead has same dimensions !Equivalent circuits Abbreviated symbol F6 (3) (2) (1) Tr2 Tr1 (4) (5) (6) !Packaging specifications Type Package Marking Code Basic ordering unit (pieces) EMF6 EMT6 F6 T2R 8000 0.13 0.5 0.5 1.0 1.6 1/5 EMF6 Transistors !Absolute maximum ratings (Ta=25°C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits VCBO −15 VCEO −12 −6 VEBO −500 IC Collector current −1.0 ICP 150(TOTAL) PC Power dissipation Tj 150 Junction temperature Tstg −55~+150 Range of storage temperature Unit V V V mA A mW °C °C ∗1 ∗2 ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Tr2 Symbol Limits Parameter VDSS 30 Drain-source voltage VGSS ±20 Gate-source voltage ID 100 Continuous Dra...