EMG3
Key Features
- 4 T VCE = 10V, IE = -5mA, f = 100MHz
- 1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. Values Unit Min. Typ. Max. 50 - - V 50 - - V 5 - - V - - 500 nA - - 500 nA - - 300 mV