ROHM Semiconductor FTZ30E
Transient Voltage Suppressor
FEATURES
High reliability Small mold type●Inner Circuit Data sheet
●Application Surge Protection
●Structure Silicon Epitaxial Planar
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ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃) Parameter Symbol Power dissipation PD Junction temperature Tj Storage temperature Tstg ESD capability VESD●Packaging Specifications Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Basic Ordering Unit(pcs) 3000 Taping Code T148 Marking D7F Conditions 4 elements total - - IEC61000-4-2 Air Contact *IEC61000-4-2 Min. Max. Unit - 200 mW - 150 ℃ -55 150 ℃ - ±15 kV - ±8 kV C=150pF R=330Ω
●Characteristics (Ta = 25℃) (Value per element) Parameter Symbol Conditions Min. Typ. Max. Unit Reverse Stand-off voltage VRWM - - - 23 V Zener voltage VZ IZ=5mA 29.19 - 30.69 V Reverse current IR VR=23V - - 0.1 μA (1)Zener voltage (VZ) is measured by applying current with 40ms pulse. © 2019 ROHMCo., Ltd.All rights reserved. 1/4 2019/02/21_Rev.001 FTZ30E
●Characteristic Curves Data sheet © 2019 ROHMCo., Ltd.All rights reserved. 2/4 2019/02/21_Rev.001 FTZ30E
●Characteristic Curves Data sheet © 2019 ROHMCo., Ltd.All rights reserved.