ROHM Semiconductor HP8KA1
30V Nch+Nch Power MOSFET
| Part No. | HP8KA1 |
|---|---|
| Datasheet | HP8KA1 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | 30V Nch+Nch Power MOSFET |
| Buy | Stock & Price |
HP8KA1 30V Nch+Nch Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 5.0mΩ 14A 3W lFeatures 1) Low on - resistance. 2) Pb-free lead plating ; RoHS compliant. 3) Halogen Free. lOutline HSOP8 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Load Switch Type Tape width (mm) Quantity (pcs) 12 2500 LiB charging and discharging switch Taping code TB Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2> HP8KA1 Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Continuous drain current ID*1 14 A Pulsed drain current IDP*2 28 A Gate - Source voltage VGSS ±20 V Power dissipation PD*3 3 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.003 HP8KA1 lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*3 Values Min. Typ. Max. - 41 - Unit ℃/W lElectrical characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Conditions Values Min.
