HP8KE7 Datasheet PDF

HP8KE7 100V Nch+Nch Power MOSFET VDSS RDS(on)(Max.) ID PD 100V 19.6mΩ ±24.0A 26W lFeatures 1) Low on - resistance 2) Small Surface Mount Package (HSOP8) 3) Pb-free plating ; RoHS compliant 4) Halogen Free lOutline HSOP8 lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Reel size (mm) Type Tape width (mm) Quantity (pcs) Taping code Marking Embossed Tape 330 12 2500 TB1 HP8KE7 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2> Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Ta = 25°C VDSS ID*1 ID IDP*2 100 V ±24.0 A ±10.0 A ±40 A Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (total) VGSS IAS*3 EAS*3 PD*1 PD*4 ±20 V 10.0 A 8.0 mJ 26 W 3.0 Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2023 ROHM Co., Ltd. All rights reserved. 1/11 20230328 - Rev.001 HP8KE7 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Datasheet Symbol RthJC*1 RthJA*4 Values Unit Min.